Ein Beitrag zur Berechnung der Stoßspannungsverteilung in Wicklungen von rotierenden Maschinen

Inhaltsübersicht 1. Problemstellung.–2. Formulierung der Bestimmungsgleichungen.–3. Ermittlung der Spannungsverteilung durch Lösung der Matrizendifferentialgleichungen.–4. Zusammenfassung.Mit 3 Textabbildungen     

Scleral buckling with Bioplast fibrin in retinal detachment

The study includes a series of 38 patients with retinal detachment of different aetiology. Scleral reduction combined with the intrascleral implantation of absorbable Bioplast fibrin scleral buckling rods was performed and reattachment achieved in 31 cases. The implant material is biocompatible and is eliminated from the eye in the course of a few weeks.     

LMI OPTIMIZATION APPROACH FOR DELAY‐DEPENDENT H∞ CONTROL OF TIME‐VARYING DELAY SYSTEMS

In this paper, the robust delay‐dependent H_∞ control for a class of uncertain systems with time‐varying delay is considered. An improved state feedback H_∞ control is proposed to minimize the H_∞‐norm bound via the LMI optimization approach. Based on the proposed result, delay‐dependent criteria are obtained without using the model transformation technique or bounded inequalities on cross product terms. The linear matrix inequality (LMI) optimization approach is used to design the robust H_∞ state feedback control. Some numerical examples are given to illustrate the effectiveness of the approach.     

Implementation of Initial-On ESD Protection Concept With PMOS-Triggered SCR Devices in Deep-Submicron CMOS Technology

In order to enhance the applications of SCR devices for deep-submicron CMOS technology, a novel SCR design with "initial-on" function is proposed to achieve the lowest trigger voltage and the highest turn-on efficiency of SCR device for effective on-chip ESD protection. Without using the special native device (NMOS with almost zero or even negative threshold voltage) or any process modification, this initial-on SCR design is implemented by PMOS-triggered SCR device, which can be realized in general CMOS processes. This initial-on SCR design has a high enough holding voltage to avoid latchup issues in a VDD operation voltage of 2.5 V. The new proposed initial-on ESD protection design with PMOS-triggered SCR device has been successfully verified in a fully-silicided 0.25-mum CMOS process     

On-Chip ESD Protection Design for Automotive Vacuum-Fluorescent-Display (VFD) Driver IC to Sustain High ESD Stress

A new electrostatic discharge (ESD) protection structure of high-voltage p-type silicon-controlled rectifier (HVPSCR) that is embedded into a high-voltage p-channel MOS (HVPMOS) device is proposed to greatly improve the ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional n+ diffusion into the drain region of HVPMOS, the transmission-line-pulsing-measured secondary breakdown current of the output driver has been greatly improved to be greater than 6 A in a 0.5- mum high-voltage complementary MOS process. Such ESD-enhanced VFD driver IC, which can sustain human-body-model ESD stress of up to 8 kV, has been in mass production for automotive applications in cars without the latchup problem. Moreover, with device widths of 500, 600, and 800 mum, the machine-model ESD levels of the HVPSCR are as high as 1100,1300, and 1900 V, respectively.     

The Impact of Gate-Oxide Breakdown on Common-Source Amplifiers With Diode-Connected Active Load in Low-Voltage CMOS Processes

The influence of gate-oxide reliability on common-source amplifiers with diode-connected active load is investigated with the nonstacked and stacked structures under analog application in a 130-nm low-voltage CMOS process. The test conditions of this work include the dc stress, ac stress with dc offset, and large-signal transition stress under different frequencies and signals. After overstresses, the small-signal parameters, such as small-signal gain, unity-gain frequency, phase margin, and output dc voltage levels, are measured to verify the impact of gate-oxide reliability on circuit performances of the common-source amplifiers with diode-connected active load. The small-signal parameters of the common-source amplifier with the nonstacked diode-connected active-load structure are strongly degraded than that with the stacked diode-connected active-load structure due to a gate-oxide breakdown under analog and digital applications. The common-source amplifiers with diode-connected active load are not functionally operational under digital application due to the gate-oxide breakdown. The impact of soft and hard gate-oxide breakdowns on the common-source amplifiers with nonstacked and stacked diode-connected active-load structures has been analyzed and discussed. The hard breakdown has more serious impact on the common-source amplifiers with diode-connected active load.     

Determination of electron drift velocity in a gaseous discharge from Doppler shifts of plasma waves

Measurements of Doppler shifts of plamsa waves in a low-pressure mercury-vapour discharge have been made, in order to determine the electron drift velocity in the positive column. It is concluded that, within the accuracy of the expenments, there is no radial variaton of the electron drift velocity in the discharge.     

Screening for novel essential genes of Saccharomyces cerevisiae involved in protein secretion

We describe here a screening procedure devised for searching new genes involved in protein secretion in Saccharomyces cerevisiae. The screening procedure takes advantage of yeast strains constructed within the EUROFAN project, in which the promoters of the novel essential genes were replaced by the doxycycline-regulated tetO(7)-CYC1 promoter. This promoter is active in normal growth medium but results in downregulation of the gene in the presence of doxycycline. The yeast cells were grown in the presence or absence of doxycycline, and both the growth and secretion of the heat shock protein, Hsp150p, into the culture medium were determined. In seven strains there was a specific effect on protein secretion. In a strain in which the RPN5 gene was downregulated, the level of secreted Hsp150p was increased compared to the control culture. When RER2 was downregulated, cells secreted Hsp150p that was not of the mature size. In five strains, secretion was more severely reduced than cell growth. One of these downregulated genes, YGL098w, was recently reported to encode an ER-located t-SNARE, USE1. Four of the genes detected, NOG2, NOP15, RRP40 and SDA1, encode proteins involved in ribosome assembly, suggesting a possible new signalling pathway between ribosome biogenesis and production of secreted proteins. The results obtained here indicate that the present screen could be successfully used in larger scale to identify novel secretion-related genes.     

New layout design for submicron CMOS output transistors to improve driving capability and ESD robustness

New layout design to effectively reduce the layout area of CMOS output transistors but with higher driving capability and better ESD reliability is proposed. The output transistors of large device dimensions are assembled by a plurality of the basic layout cells, which have the square, hexagonal or octagonal shapes. The output transistors realized by these new layout styles have more symmetrical device structures, which can be more uniformly triggered during the ESD-stress events. With theoretical calculation and experimental verification, both higher output driving/sinking current and stronger ESD robustness of CMOS output buffers can be practically achieved by the proposed new layout styles within a smaller layout area in the non-silicided bulk CMOS process. The output transistors assembled by a plurality of the proposed layout cells also have a lower gate resistance and a smaller drain capacitance than that realized by the traditional finger-type layout.